Electrically erasable and programmable read only memory with tre

Details Electrically erasable and programmable read only memory with tre Electrically erasable and programmable read only memory with tre

1990-11-08

1992-09-08

Fears, Terrell W.

Static information storage and retrieval

Systems using particular element

Capacitors

365185, 357 236, G11C 1300, G11C 1124

Patent

active

051464268

ABSTRACT:
An Erasable and Programmable Read Only Memory (EEPROM) cell is provided with an insulated control gate and an insulating floating gate formed in a trench in a semiconductor body. A surface-adjoining drain region is provided alongside an upper portion of a sidewall of the trench, while a source region is provided alongside a lower portion of the trench sidewall, with a channel region extending along the sidewall of the trench between the source and drain regions. The EEPROM cell is programmed by hot electron injection through the sidewall of the trench alongside the channel region, and is erased by Fowler Nordhiem tunneling through a corner region in the bottom of the trench by creating a localized high electric field density in the corner region. In this manner, a highly compact, efficient and durable EEPROM cell is obtained.

REFERENCES:
patent: Re33261 (1990-07-01), Baglee

Affiliated with

Also associated with

Rating

Electrically erasable and programmable read only memory with tre does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Electrically erasable and programmable read only memory with tre, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Electrically erasable and programmable read only memory with tre will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-139590