Electrically erasable and programmable read-only memory with sou

Details Electrically erasable and programmable read-only memory with sou Electrically erasable and programmable read-only memory with sou

1991-12-19

1994-01-11

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257397, 257398, 257618, 257408, 365185, 437 35, H01L 2968, H01L 2906, G11C 1134

Patent

active

052784380

ABSTRACT:
A nonvolatile storage device is provided with at least one stacked poly gate structure formed on the substrate and disposed between a first trench and a second trench. The trenches each having two walls. A first doped area having a first conductivity type extending along the wall of the first trench and a second doped area having a second conductivity type extending along the wall of the second trench. The first doped area and the second doped area having heights greater than widths, the heights being parallel to the trench walls and the widths being perpendicular thereto. The trench walls are lined with a metal silicide to decrease resistivity.

REFERENCES:
patent: 4797718 (1989-01-01), Schubert
patent: 4912535 (1990-03-01), Okumura
patent: 5043787 (1991-08-01), Soclof
patent: 5053839 (1991-10-01), Esquivel et al.
patent: 5084418 (1992-01-01), Esquivel et al.
patent: 5218221 (1993-06-01), Okumura

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