Electrically erasable and programmable read only memory with non

Details Electrically erasable and programmable read only memory with non Electrically erasable and programmable read only memory with non

1995-06-28

1997-02-25

Nelms, David C.

Static information storage and retrieval

Systems using particular element

Capacitors

36518526, 257314, 257315, G11C 1100, G11C 1134, H01L 29788

Patent

active

056065213

ABSTRACT:
An electrically erasable and programmable read only memory (EEPROM) is provided with an insulated control gate and an insulating floating gate in a trench in a semiconductor body. A dielectric layer is disposed along the sidewalls of the trench to separate the floating gate and the semiconductor body. The thickness of the dielectric layer along at least one sidewall of the trench is greater than the thickness of the dielectric layer along the other sidewalls of the trench in order to increase the programming speed due to a higher electric field in the gate oxide along the remaining sidewalls.

REFERENCES:
patent: 4990979 (1991-02-01), Otto
patent: 5017977 (1991-05-01), Richardson
patent: 5146426 (1992-09-01), Mukherjee et al.
patent: 5386132 (1995-01-01), Wong

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