Electrically erasable and programmable read only memory (EEPROM)

Details Electrically erasable and programmable read only memory (EEPROM) Electrically erasable and programmable read only memory (EEPROM)

1996-11-26

1998-05-12

Munson, Gene M.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257390, 265104, 26518505, H01L 29788, G11C 1140

Patent

active

057510385

ABSTRACT:
An electrically erasable and programmable read only memory (EEPROM) includes an array of trench memory cells, with each memory cell having a semiconductor drain region adjacent a surface-adjoining portion of the trench. The EEPROM is provided with at least two overlapping metallization layers overlying the memory cells and separated from each other and from the trenches and the drain regions by regions of insulating material. The overlapping metallization layers contact the drain regions of the underlying memory cells through the insulating material. This configuration results in a memory array having a very high packing density.

REFERENCES:
patent: 5146426 (1992-09-01), Mukherjee et al.
patent: 5338953 (1994-08-01), Wake
patent: 5392237 (1995-02-01), Iida

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