Electrically erasable and programmable read only memory device v

Details Electrically erasable and programmable read only memory device v Electrically erasable and programmable read only memory device v

1993-02-25

1994-04-19

LaRoche, Eugene R.

Static information storage and retrieval

Read/write circuit

Including reference or bias voltage generator

36518906, 36518911, G11C 700, G11C 1600

Patent

active

053052609

ABSTRACT:
An electrically erasable and programmable read only memory device executes a verifying operation on a selected memory cell after a programming operation, and a predetermined voltage higher than a read-out voltage is applied to the control gate electrode to see whether or not the threshold level of the selected memory cell is high enough to remain in the programmed state, wherein the predetermined voltage is internally produced from an external power voltage level so that an electronic system is not expected to be equipped with a source of predetermined voltage, thereby making the electronic system simple.

REFERENCES:
patent: 4737936 (1988-04-01), Takeuchi
patent: 4951257 (1990-08-01), Imamiya et al.
patent: 5124945 (1992-06-01), Schreck
patent: 5153467 (1992-10-01), Mao

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