Electrically erasable and programmable read only memory cell wit

Details Electrically erasable and programmable read only memory cell wit Electrically erasable and programmable read only memory cell wit

1995-10-26

1998-05-26

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257317, 257321, H01L 29788

Patent

active

057570442

ABSTRACT:
A floating gate type field effect transistor has a plurality of floating gate sub-electrodes on a lower gate oxide layer electrically isolated from one another; even if one of the floating gate sub-electrodes changes a part of a channel region thereunder to depletion state due to an over-erase, the over-erase does not affect the function of the floating gate type field effect transistor, because another sub-electrode transfers and cuts off channel current depending upon the amount of electrons accumulated therein.

REFERENCES:
patent: 4380057 (1983-04-01), Kotecha et al.
patent: 4590503 (1986-05-01), Harari et al.
patent: 5357134 (1994-10-01), Shimoji
patent: 5511036 (1996-04-01), Farb et al.

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