Electrically erasable and programmable read only memory cell

Details Electrically erasable and programmable read only memory cell Electrically erasable and programmable read only memory cell

1995-02-27

1996-01-30

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257315, 257316, 257324, 257332, 257412, 437 43, 437186, 437196, 437203, 437233, 437913, H01L 2976, H01L 21265

Patent

active

054882443

ABSTRACT:
A novel design for an electrically erasable and programmable read only memory device is described. Particular features of the design include a floating gate that is partly located beneath the surface and and an efficient electron emitter to facilitate electron transfer between floating and control gates. The method for constructing the device is disclosed in detail.

REFERENCES:
patent: 4975383 (1990-12-01), Baglee
patent: 5442214 (1995-08-01), Yang

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