Electrically erasable and programmable non-volatile semiconducto

Details Electrically erasable and programmable non-volatile semiconducto Electrically erasable and programmable non-volatile semiconducto

1990-09-19

1992-12-22

Popek, Joseph A.

Static information storage and retrieval

Read/write circuit

Including signal comparison

365195, 365228, G11C 1606

Patent

active

051738767

ABSTRACT:
Where an electrically erasable and programmable non-volatile semiconductor memory element (EEPROM cell) for storing a setting and releasing of the software data protection has already been set in the logic state designating the software data protection setting state, and operation of setting the logical state designating the software data protection setting is not applied to the EEPROM cell even if the address and data for setting the software data protection is input. Further, where the logic state designating the releasing of the software data protection has been set in the electrically erasable and programmable non-volatile semiconductor memory element, the operation of setting the logical state designating the release of the software data protection is not set to the EEPROM cell, even if the address and the data for releasing the software data protection is input.

REFERENCES:
patent: 4744062 (1988-05-01), Nakamura et al.
patent: 4763305 (1988-08-01), Kuo
patent: 4975878 (1990-12-01), Boddu et al.

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