Electrically enhancing the confinement of plasma

Details Electrically enhancing the confinement of plasma Electrically enhancing the confinement of plasma

2004-12-30

2009-12-15

Cleveland, Michael (Department: 1792)

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

C156S915000

Reexamination Certificate

active

07632375

ABSTRACT:
A vacuum plasma processor includes a chamber having a grounded wall and an outlet port. Plasma is excited at a first RF frequency in a chamber region spaced from the wall and outlet port. A structure confines the plasma to the region while enabling gas to flow from the region to the outlet port. RF electric power at a second frequency connected to the confining structure causes the confining structure to be at a potential different from ground to increase the size of a sheath between the plasma and confining structure and increase the confining structure effectiveness. The region includes an electrode connected to ground by a circuit that is series resonant to the first frequency and includes capacitance of the sheath.

REFERENCES:
patent: 4483737 (1984-11-01), Mantei
patent: 5252178 (1993-10-01), Moslehi
patent: 5316645 (1994-05-01), Yamagami et al.
patent: 5534751 (1996-07-01), Lenz et al.
patent: 5904800 (1999-05-01), Mautz
patent: 5998932 (1999-12-01), Lenz
patent: 6019060 (2000-02-01), Lenz
patent: 6178919 (2001-01-01), Li et al.
patent: 6244211 (2001-06-01), Nishikawa et al.
patent: 6281469 (2001-08-01), Perrin et al.
patent: 6375860 (2002-04-01), Ohkawa et al.
patent: 6423176 (2002-07-01), Ito et al.
patent: 6492774 (2002-12-01), Han et al.
patent: 6579425 (2003-06-01), Voutsas et al.
patent: 6602381 (2003-08-01), Lenz
patent: 6872281 (2005-03-01), Chen et al.
patent: 2001/0037770 (2001-11-01), Otsubo
patent: 2001/0047760 (2001-12-01), Moslehi
patent: 2002/0005348 (2002-01-01), Xu et al.
patent: 2002/0067133 (2002-06-01), Brown et al.
patent: 2003/0008492 (2003-01-01), Jung et al.
patent: 2003/0037881 (2003-02-01), Barnes et al.
patent: 2004/0094402 (2004-05-01), Gopalraja et al.
patent: 2005/0016684 (2005-01-01), Sun et al.

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