Electrically alterable programmable nonvolatile floating gate me

Details Electrically alterable programmable nonvolatile floating gate me Electrically alterable programmable nonvolatile floating gate me

1983-08-17

1986-08-26

James, Andrew J.

Static information storage and retrieval

Magnetic bubbles

Guide structure

357 235, 365185, H01L 2934, G11C 1134

Patent

active

046085912

ABSTRACT:
An electrically alterable, nonvolatile floating gate memory device is described wherein the word line and the floating gate are arranged in a parallel relationship with the word line positioned above the floating gate and coincident therewith. A program line is oriented perpendicularly to both the floating gate and the word line in order to minimize the floating gate-program line capacitance and maximize the floating gate-word line capacitance. The net result of using such an arrangement is to reduce the disturbance of the non-selected cells during the write cycle and also to achieve a significant higher packing density.

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patent: 4486769 (1984-12-01), Simko
patent: 4513397 (1985-04-01), Ipri et al.
Hsieh et al., IBM Technical Disclosure Bulletin, vol. 23, No. 2, 7/80.
"16-K EE-PROM Relies on Tunneling for Byte-Erasable Program Storage", W. S. Johnson, et al., Electronics, Feb. 28, 1980, pp. 113-117.

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