Electrically alterable non-volatile memory with N-bits per cell

Details Electrically alterable non-volatile memory with N-bits per cell Electrically alterable non-volatile memory with N-bits per cell

1997-08-15

1999-02-16

Fears, Terrell W.

Static information storage and retrieval

Read/write circuit

365218, G11C 1300

Patent

active

058727353

ABSTRACT:
An electrically alterable, non-volatile memory cell has more than 2 memory states that can be programmed selectively. Programming of the cell is conducted by applying a plurality of programming signals having different characteristics to the cell. The programming signals include at least a first programming signal which programs the cell by a first increment and a subsequent programming signal which programs the cell by a second increment smaller than the first increment. As the cell is being programmed to a selected state, its programming status is verified independently of reference values bounding the memory states. For this purpose, a signal indicative of the programming status (e.g., the cell's bit line signal) is compared with a reference signal corresponding to the selected state but having a value different from the reference value or values bounding the selected state. The programming operation can thus be controlled without actually reading the memory state of the cell.

REFERENCES:
patent: 4903236 (1990-02-01), Nakayama et al.

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