Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-08-22
2006-08-22
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S316000, C365S185180
Reexamination Certificate
active
07095076
ABSTRACT:
A method, apparatus, and system in which an embedded memory comprises one or more electrically-alterable non-volatile memory cells that include a coupling capacitor, a read transistor, and a tunneling capacitor. The coupling capacitor has a first gate composed of both N+ doped material and P+ doped material, and a P+ doped region abutted to a N+ doped region. The P+ doped region abutted to the N+ doped region surrounds the first gate. The read transistor has a second gate. The tunneling capacitor has a third gate composed of both N+ doped material and P+ doped material.
REFERENCES:
patent: 4375086 (1983-02-01), van Velthoven
patent: 4467457 (1984-08-01), Iwahashi et al.
patent: 4672580 (1987-06-01), Yau et al.
patent: 4807188 (1989-02-01), Casagrande
patent: 4884241 (1989-11-01), Tanaka
patent: 4951257 (1990-08-01), Imamiya et al.
patent: 4970691 (1990-11-01), Atsumi et al.
patent: 5027171 (1991-06-01), Reedy
patent: 5251171 (1993-10-01), Yamauchi
patent: 5253196 (1993-10-01), Shimabukuro et al.
patent: 5299162 (1994-03-01), Kim et al.
patent: 5331597 (1994-07-01), Tanaka
patent: 5424000 (1995-06-01), Winicov et al.
patent: 5430670 (1995-07-01), Rosenthal
patent: 5587945 (1996-12-01), Lin et al.
patent: 5638325 (1997-06-01), Hamamoto
patent: 5668752 (1997-09-01), Hashimoto
patent: 5732022 (1998-03-01), Kato et al.
patent: 5742542 (1998-04-01), Lin et al.
patent: 5761121 (1998-06-01), Chang
patent: 5768186 (1998-06-01), Ma
patent: 5781489 (1998-07-01), Okamoto
patent: 5801076 (1998-09-01), Ghneim et al.
patent: 5808013 (1998-09-01), Ghneim et al.
patent: 5808953 (1998-09-01), Kim et al.
patent: 5854114 (1998-12-01), Li et al.
patent: 5885870 (1999-03-01), Maiti et al.
patent: 5942780 (1999-08-01), Barsan et al.
patent: 5999466 (1999-12-01), Marr et al.
patent: 6018477 (2000-01-01), Wang
patent: 6046926 (2000-04-01), Tanaka et al.
patent: 6064105 (2000-05-01), Li et al.
patent: 6069382 (2000-05-01), Rahim
patent: 6084820 (2000-07-01), Raszka
patent: 6094394 (2000-07-01), La Rosa
patent: 6133098 (2000-10-01), Ogura et al.
patent: 6144581 (2000-11-01), Diorio et al.
patent: 6295226 (2001-09-01), Yang
patent: 6324097 (2001-11-01), Chen et al.
patent: 6330186 (2001-12-01), Tanaka
patent: 6331951 (2001-12-01), Bsutista et al.
patent: 6337808 (2002-01-01), Forbes
patent: RE37593 (2002-03-01), Etoh et al.
patent: 6370061 (2002-04-01), Yachareni et al.
patent: 6407946 (2002-06-01), Maruyama et al.
patent: 6417728 (2002-07-01), Baschirotto et al.
patent: 6445614 (2002-09-01), Tsai et al.
patent: 6473356 (2002-10-01), Raszka
patent: 6631087 (2003-10-01), Di Pede et al.
patent: 6674665 (2004-01-01), Mann et al.
patent: 6788574 (2004-09-01), Han et al.
patent: 6842375 (2005-01-01), Raxzka
patent: 6992938 (2006-01-01), Shubat et al.
patent: 2001/0028590 (2001-10-01), Ishikawa et al.
McPartland et al., “1.25 Volt, Low Cost, Embedded FLASH Memory for Low Density Applications,” 2000 Symposium on VLSI Circuits Digest of Technical Papers, pp. 158-161.
Simon J. Lovett, “The Nonvolatile Cell Hidden in Standard CMOS Logic Technolgies,” IEEE Transactions on Electron Devices, vol. 48, No. 5, May 2001, pp. 1017-1018.
Ohsaki et al., “A Single Polysilicon wafer EEPROM Cell Structure for Use in Standard CMOS Processes,” IEEE Journal of Solid-State Circuits, vol. 29, No. 3, Mar. 1994, pp. 311-316.
Derhacobian Narbeh
Han Kim-Kwong Michael
Raszka Jaroslav
Blakely , Sokoloff, Taylor & Zafman LLP
Nelms David
Nguyen Dao H.
Virage Logic Corporation
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