Static information storage and retrieval – Read/write circuit
Patent
1998-11-18
2000-08-15
Fears, Terrell W.
Static information storage and retrieval
Read/write circuit
36523001, 365168, G11C 1300
Patent
active
06104640&
ABSTRACT:
An electrically alterable, non-volatile memory cell has more than two memory states that can be programmed selectively. Programming of the cell is conducted by applying a plurality of programming signals having different characteristics to the cell. The programming signals include at least a first programming signal which programs the cell by a first increment and a subsequent programming signal which programs the cell by a second increment smaller than the first increment. As the cell is being programmed to a selected state, its programming status is verified independently of reference values bounding the memory states. For this purpose, a signal indicative of the programming status (e.g., the cell's bit line signal) is compared with a reference signal corresponding to the selected state but having a value different from the reference value or values bounding the selected state. The programming operation can thus be controlled without actually reading the memory state of the cell.
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BTG International Inc.
Fears Terrell W.
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