Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2006-10-17
2006-10-17
Ngô, Ngân V. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S752000, C257S758000, C257SE23011
Reexamination Certificate
active
07122898
ABSTRACT:
The present invention provides an electrical programmable metal resistor and a method of fabricating the same in which electromigration stress is used to create voids in the structure that increase the electrical resistance of the resistor. Specifically, a semiconductor structure is provided that includes an interconnect structure comprising at least one dielectric layer, wherein said at least one dielectric layer comprises at least two conductive regions and an overlying interconnect region embedded therein, said at least two conductive regions are in contact with said overlying interconnect region by at least two contacts and at least said interconnect region is separated from said at least one dielectric layer by a diffusion barrier, wherein voids are present in at least the interconnect region which increase the electrical resistance of the interconnect region.
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Clevenger Lawrence A.
Demarest James J.
Hsu Louis C.
Radens Carl
Yang Chih-Chao
Jaklitsch, Esq. Lisa U.
Ngo Ngan V.
Scully , Scott, Murphy & Presser, P.C.
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