Electrical open/short contact alignment structure for active...

Electricity: measuring and testing – Impedance – admittance or other quantities representative of... – Lumped type parameters

Reexamination Certificate

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C324S765010, C257S048000, C438S014000

Reexamination Certificate

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07659733

ABSTRACT:
An apparatus for measuring a structural characteristic between a polysilicon shape and a silicon area. The apparatus for measuring a structural characteristic between a polysilicon shape and a silicon area comprises the silicon area, and a plurality of polysilicon shapes each having a unique orientation relative to the silicon area wherein each of the polysilicon shapes is formed having an angle less than or equal to a critical angle. The critical angle is an angle at or below which a sidewall spacer no longer is formed on a polysilicon shape, thereby causing the polysilicon shape to short circuit to an underlying portion of the silicon area by way of a silicide bridge.

REFERENCES:
patent: 4983544 (1991-01-01), Lu et al.
patent: 5699282 (1997-12-01), Allen et al.
patent: 6268630 (2001-07-01), Schwank et al.
patent: 6461880 (2002-10-01), Tsiang
patent: 6468899 (2002-10-01), Choi
patent: 6593217 (2003-07-01), Fujisawa
patent: 6777759 (2004-08-01), Chau et al.

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