Electricity: measuring and testing – Impedance – admittance or other quantities representative of... – Lumped type parameters
Reexamination Certificate
2006-11-15
2008-11-18
Nguyen, Vincent Q. (Department: 2831)
Electricity: measuring and testing
Impedance, admittance or other quantities representative of...
Lumped type parameters
C324S765010, C257S048000, C438S014000
Reexamination Certificate
active
07453272
ABSTRACT:
A method is disclosed for measuring alignment of polysilicon shapes relative to a silicon area wherein the presence of an electrical coupling is used to determine the presence of bias or misalignment. Bridging vertices on the polysilicon shapes are formed. Bridging vertices over the silicon area create low resistance connections between those bridging vertices and the silicon area; other bridging vertices over ROX (recessed oxide) areas do not create low resistance connections between those other bridging vertices and the silicon area. Determining which bridging vertices have low resistance connections to the silicon area and how many bridging vertices have low resistance connections to the silicon area are used to determine the bias and misalignment of the polysilicon shapes relative to the silicon area.
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Donze Richard Lee
Erickson Karl Robert
Hovis William Paul
Sheets John Edward
Tetzloff Jon Robert
He Amy
International Business Machines - Corporation
Nguyen Vincent Q.
Williams Robert R.
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