Electrical memory component and a method of construction...

Static information storage and retrieval – Systems using particular element – Amorphous

Reexamination Certificate

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C369S126000

Reexamination Certificate

active

10941503

ABSTRACT:
An electrical memory component is provided, comprising read/write probes and a chalcogenide storage media. Each read/write probe is adapted for selective electrical connection to a memory portion of the chalcogenide storage media and for performing read and write operations upon the memory portion. The chalcogenide storage media has a second plurality of memory portions, and is movably mounted relative to the first plurality of read/write probes for selective electrical connection of the read/write probes to a subset of the memory portions.

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Y.C. Chen, et al, Chalcogenide memory looks promising, EETIMES, Sep. 19, 2003, http://www.eet.com/in—focus/silicon—engineering/OEG20030919S0044.
J. Maimon, et al, Intergration and Circuit Demonstration of Chalcogenide Memory Elements with a Radiation Hardened CMOS Technology.

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