Electrical measurement of sidewall angle

Details Electrical measurement of sidewall angle Electrical measurement of sidewall angle

1992-09-18

1994-05-03

Kight, III, John

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

156643, G03C 500, B44C 122

Patent

active

053087402

ABSTRACT:
A method for measuring the sidewall angle of patterned photoresist (16), as well as wall angles of other materials, is provided. The method comprises forming two copies of the patterned photoresist feature for which the sidewall measurement is to be obtained on a conducting substrate (14). The first copy is processed via conventional techniques for linewidth measurement, which consists of a pattern transfer etch of the first copy into the underlying conductive substrate, followed by electrical measurement of the conductor linewidth to yield linewidth 1 (LW1). The second copy is processed such that there is a shape altering etch prior to the pattern transfer etch. A linewidth 2 (LW2) is obtained. The angle is then extracted from the two linewidth measurements.

REFERENCES:
patent: 4436584 (1984-03-01), Bernacki et al.
J. Pelletier et al, "Etching mechanisms of polymers in oxygen microwave multipolar plasmas", in Applied Physics Letters, vol. 53(20), pp. 1914-1916 (Nov. 14, 1988).
J. Pelletier et al, "Microwave plasma etching of Si and SiO.sub.2 in halogen mixtures: Interpretation of etching mechanisms", in Journal of Vacuum Science and Technology B, vol. 7, No. 1, pp. 59-67 (Jan./Feb. 1989).

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