Electrical erasable programmable memory transconductance...

Details Electrical erasable programmable memory transconductance... Electrical erasable programmable memory transconductance...

2007-12-28

2009-06-09

Nguyen, Tan T. (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185090

Reexamination Certificate

active

07545679

ABSTRACT:
A test method determines if an array of a Flash EEPROM circuit has a bit cell with a transconductance (gm) that is deficient. The method preconditions all bit cells of the array to a particular programmed state and then determines whether any of the bit cells exhibit undesirable operating characteristics by reading each bit cell to determine whether its transconductance is less than desirable.

REFERENCES:
patent: 5521867 (1996-05-01), Chen et al.
patent: 6233178 (2001-05-01), Krishnamurthy et al.
patent: 6834012 (2004-12-01), He et al.
patent: 7218553 (2007-05-01), Devin
patent: 7453732 (2008-11-01), Devin

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