Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2011-06-14
2011-06-14
Smoot, Stephen W (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257SE29324, C257SE29342
Reexamination Certificate
active
07960812
ABSTRACT:
Electrical devices having tunable capacitance are provided. The tunable capacitance is achieved by placing an appropriate material between substrate layers and by controllably applying a pressure to the material to compress the material or alter the shape of a well in which the material is contained, and thereby alter the capacitance of the electrical device. The composition, shape and dimension of the embedded materials determine how the capacitance of the electrical device is altered upon compression of the embedded material in response to an applied control signal. Generally, as the embedded material is compressed, the material will become more dense and the capacitance of the integrated electrical device is altered.
REFERENCES:
patent: 5159316 (1992-10-01), Lazzara
patent: 6667725 (2003-12-01), Simons et al.
Carberry Patrick J.
Gilbert Jeffery J.
Agere Systems Inc.
Ryan & Mason & Lewis, LLP
Smoot Stephen W
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