Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-11-03
2008-11-04
Le, Thao P. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S401000
Reexamination Certificate
active
07446355
ABSTRACT:
A method of fabricating self-aligned recess utilizing asymmetric poly spacer is disclosed. A semiconductor substrate having thereon a first pad layer and second pad layer is provided. A plurality of trenches is embedded in a memory array region of the semiconductor substrate. Each of the trenches includes a trench top layer that extrudes from a main surface of the semiconductor substrate. Asymmetric poly spacer is formed on one side of the extruding trench top layer and is used, after oxidized, as a mask for forming a recess in close proximity to the trenches.
REFERENCES:
patent: 2002/0127798 (2002-09-01), Prall
patent: 2007/0096185 (2007-05-01), Kim et al.
patent: 2008/0009112 (2008-01-01), Lee et al.
Cheng Chien-Li
Lee Chung-Yuan
Lee Pei-Ing
Lin Shian-Jyh
Hsu Winston
Le Thao P.
Nanya Technology Corp.
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