Electrical critical dimension measurement and defect...

Electricity: measuring and testing – Impedance – admittance or other quantities representative of... – Lumped type parameters

Reexamination Certificate

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C324S716000, C438S010000, C438S017000

Reexamination Certificate

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06972576

ABSTRACT:
A system for testing a reticle used in semiconductor wafer fabrication is provided. The system includes a reticle that has an opaque metal layer over a translucent substrate. The reticle includes one or more test features containing probe points operable for electrical contact. The system includes a reticle test system that is capable of applying a voltage to the probe points, measuring the resulting current, calculating the corresponding resistance of the test features, and determining the critical dimensions of the test features. The system is also capable of determining defects based on the resistance measurements. The critical dimension information and defect information can then be used to refine the processes used in the fabrication of subsequent reticles.

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