Electrical contact to buried SOI structures

Details Electrical contact to buried SOI structures Electrical contact to buried SOI structures

1998-11-17

2000-06-06

Bowers, Charles

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438149, 438161, 438622, H01L 2100, H01L 214763

Patent

active

06071803&

ABSTRACT:
Electrically conductive studs are employed to interconnect bulk active devices and SOI devices in a semiconductor device. Also provided is a method for fabricating such devices.

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