Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Patent
1994-11-22
1996-07-02
Meier, Stephen D.
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified configuration
257773, H01L 2348, H01L 2352, H01L 2940
Patent
active
055325181
ABSTRACT:
A transfer metal configuration and fabrication process possessing increased probability of intersecting a transverse metallization level are presented, without employing an increase in actual metal thickness. The transfer metal is configured with a non-rectangular transverse cross-section such that the thickness of the electrical connect remains the same, but the transverse contact area of the exposed metal is increased. The entire transfer metal may have the same transverse cross-sectional configuration or have portions with different transverse configurations. If different configurations are employed, each portion of the transfer metal to be transversely intersected has the enhanced cross-sectional configuration. A tiered transverse configuration is presented which facilitates electrical connection of the transfer metal to a metal level on a face of a semiconductor cube structure.
REFERENCES:
patent: 4912288 (1990-03-01), Atkinson et al.
patent: 4933743 (1990-06-01), Thomas et al.
patent: 5220490 (1993-06-01), Weigler et al.
patent: 5288235 (1994-02-01), Sobhani
patent: 5293005 (1994-03-01), Yamamura
Hakey Mark C.
Holmes Steven J.
Wursthorn John M.
International Business Machines - Corporation
Meier Stephen D.
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