Active solid-state devices (e.g. – transistors – solid-state diode – Miscellaneous
Reexamination Certificate
2005-04-26
2005-04-26
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Miscellaneous
C257S266000, C257S327000, C257S749000, C257S750000, C174S255000, C174S260000, C345S099000, C345S100000, C345S107000, C349S049000, C349S050000
Reexamination Certificate
active
06885110
ABSTRACT:
TFT array substrates used for liquid crystal display panels are disclosed of which the fabrication processes are simplified and the manufacturing costs are reduced by reducing the number of masks used in fabricating the TFT array substrates. A gate wiring line metal film, a gate insulating film, a semiconductor film, and a contact electrode metal film are formed on a substrate surface. The contact electrode metal film, the semiconductor film, the gate insulating film, and the gate wiring line metal film are sequentially etched, by photolithography, using a first pattern, and the side surfaces of a gate wiring line metal film pattern, which is formed into portions of gate wiring lines and gate electrodes, are oxidized. A transparent conductive film is formed, and part of the transparent conductive film, the contact electrode metal film, and the semiconductor film are sequentially etched, by photolithography, using a second pattern.
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Matsushita Electric - Industrial Co., Ltd.
Nelms David
Parkhurst & Wendel L.L.P.
Tran Long
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