Static information storage and retrieval – Systems using particular element – Negative resistance
Reexamination Certificate
2005-09-09
2009-08-18
Nguyen, Tuan T. (Department: 2824)
Static information storage and retrieval
Systems using particular element
Negative resistance
C365S148000, C365S163000
Reexamination Certificate
active
07577022
ABSTRACT:
An electric element includes: a first electrode (1); a second electrode (3); and a layer (2) connected between the first electrode and the second electrode and having a diode characteristic and a variable resistance characteristic. The layer (2) conducts a substantial electric current in a forward direction extending from one of the first electrode (1) and the second electrode (3) to the other electrode as compared to a reverse direction opposite of the forward direction. The resistance value of the layer (2) for the forward direction increases or decreases according to a predetermined pulse voltage applied between the first electrode (1) and the second electrode (3).
REFERENCES:
patent: 6204139 (2001-03-01), Liu et al.
patent: 6673691 (2004-01-01), Zhuang et al.
patent: 7050327 (2006-05-01), Campbell
patent: 7459716 (2008-12-01), Toda et al.
patent: 2004/0090823 (2004-05-01), Brocklin et al.
patent: 2004/0145944 (2004-07-01), Pashmakov
patent: 2007/0297231 (2007-12-01), Gilton
patent: 2008/0258129 (2008-10-01), Toda
patent: 1 426 966 (2004-06-01), None
Zhuang et al., “Novell Colossal Magnetoresistive Thin Film Nonvolatile Resistance Random Access Memory (RRAM),” pp. 193-196, IEEE, 2002, USA.
Mitani Satoru
Muraoka Shunsaku
Osano Koichi
Seki Hiroshi
McDermott Will & Emery LLP
Nguyen Tuan T.
Panasonic Corporation
LandOfFree
Electric element, memory device, and semiconductor... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Electric element, memory device, and semiconductor..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Electric element, memory device, and semiconductor... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4085481