Electric device utilizing antioxidation film between base pad fo

Active solid-state devices (e.g. – transistors – solid-state diode – Encapsulated

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174 522, 174 524, 257666, 257790, H01L 2348, H01L 2944, H01L 2952, H01L 2960

Patent

active

051929953

ABSTRACT:
An improved electric device and manufacturing method for the same are described. The device is for example an IC chip clothed with moulding. In advance of the moulding process, the rear surface of lead frame of the IC chip is cleaned and coated with an antioxidation film made of silicon nitride in order to avoid the oxidation of the lead frame. The antioxidation film ensures the connection of the moulding and the lead frame and protect the IC chip from moisture invaded through cracks or gaps. The coating of silicon nitride is carried out after cleaning the lead frame.

REFERENCES:
patent: 4001872 (1977-01-01), Khajezadeh
patent: 4707724 (1987-11-01), Suzuki et al.
patent: 4710796 (1987-12-01), Ikeya et al.
patent: 5013688 (1991-05-01), Yamazaki et al.
patent: 5057900 (1991-10-01), Yamazaki et al.

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