Active solid-state devices (e.g. – transistors – solid-state diode – Encapsulated
Patent
1991-02-14
1993-03-09
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Encapsulated
174 522, 174 524, 257666, 257790, H01L 2348, H01L 2944, H01L 2952, H01L 2960
Patent
active
051929953
ABSTRACT:
An improved electric device and manufacturing method for the same are described. The device is for example an IC chip clothed with moulding. In advance of the moulding process, the rear surface of lead frame of the IC chip is cleaned and coated with an antioxidation film made of silicon nitride in order to avoid the oxidation of the lead frame. The antioxidation film ensures the connection of the moulding and the lead frame and protect the IC chip from moisture invaded through cracks or gaps. The coating of silicon nitride is carried out after cleaning the lead frame.
REFERENCES:
patent: 4001872 (1977-01-01), Khajezadeh
patent: 4707724 (1987-11-01), Suzuki et al.
patent: 4710796 (1987-12-01), Ikeya et al.
patent: 5013688 (1991-05-01), Yamazaki et al.
patent: 5057900 (1991-10-01), Yamazaki et al.
Hirose Naoki
Koyama Itaru
Urata Kazuo
Yamazaki Shunepi
Hille Rolf
Ostrowski David
Semiconductor Energy Laboratory Co,. Ltd.
LandOfFree
Electric device utilizing antioxidation film between base pad fo does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Electric device utilizing antioxidation film between base pad fo, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Electric device utilizing antioxidation film between base pad fo will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-213639