Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2011-03-15
2011-03-15
Kebede, Brook (Department: 2894)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C977S938000
Reexamination Certificate
active
07906380
ABSTRACT:
An electric device having a plurality of nanowires, in which at least one of the nanowires is cut or changed in its electric characteristics so as to have a desired characteristic value of the electric device.
REFERENCES:
patent: 6340822 (2002-01-01), Brown et al.
patent: 6872645 (2005-03-01), Duan et al.
patent: 7696022 (2010-04-01), Ikeda
patent: 2005/0079659 (2005-04-01), Duan et al.
patent: H10-106960 (1998-04-01), None
X. Duan et al., “High-performance thin-film transistors using semiconductor nanowires and nanoribbons”, Nature, Sep. 18, 2003, 274-278, vol. 425, Nature Publishing Group, England.
Canon Kabushiki Kaisha
Fitzpatrick ,Cella, Harper & Scinto
Kebede Brook
LandOfFree
Electric device having nanowires, manufacturing method... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Electric device having nanowires, manufacturing method..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Electric device having nanowires, manufacturing method... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2769425