Electric device having nanoscale wires and gaps

Details Electric device having nanoscale wires and gaps Electric device having nanoscale wires and gaps

2006-08-08

2006-08-08

Weiss, Howard (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S310000

Reexamination Certificate

active

07087946

ABSTRACT:
A method for forming first and second linear structures of a first composition that meet at right angles, there being a gap at the point at which the structures meet. The linear structures are constructed on an etchable crystalline layer having the first composition. First and second self-aligned nanowires of a second composition are grown on this layer and used as masks for etching the layer. The self-aligned nanowires are constructed from a material that has an asymmetric lattice mismatch with respect to the crystalline layer. The gap is sufficiently small to allow one of the structures to act as the gate of a transistor and the other to form the source and drain of the transistor. The gap can be filled with electrically switchable materials thereby converting the transistor to a memory cell.

REFERENCES:
patent: 6286226 (2001-09-01), Jin
patent: 6515339 (2003-02-01), Shin et al.
patent: 6590231 (2003-07-01), Watanabe et al.
patent: 6707098 (2004-03-01), Hofmann et al.
patent: 04-097564 (1992-03-01), None

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