Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1995-07-19
1997-10-14
Saadat, Mahshid D.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257388, H01L 2976, H01L 2994, H01L 31062, H01L 31113
Patent
active
056775598
ABSTRACT:
An improved method of forming insulated gate field effect transistors is described. In accordance with the method, gate electrodes are formed from metal such as aluminum together with wirings electrically connecting the gate electrodes. The gate electrodes are anodic oxidized by dipping them as an anode in an electrolyte to form an oxide of the metal covering them. Since the connecting wirings are covered with a suitable organic film before the anodizing, no aluminum oxide is formed thereon so that it is easy to remove the connecting wiring by usual etching.
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Adachi Hiroki
Koyama Itaru
Uochi Hideki
Yamazaki Shunpei
Zhang Hongyong
Clark S. V.
Ferguson Jr. Gerald J.
Saadat Mahshid D.
Semiconductor Energy Laboratory Co,. Ltd.
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