Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2007-10-16
2007-10-16
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S496000, C438S584000, C438S758000, C257SE21003, C118S052000, C118S055000, C118S211000
Reexamination Certificate
active
10941867
ABSTRACT:
Aspects of the invention can provide an ejection method to form a micro lens efficiently on each of a plurality of semiconductor lasers in a wafer state. So that a distance in an x-axis direction between two mutually adjacent sections subject to ejection and a distance between any two nozzles of a plurality of nozzles arranged in the x-axis direction may be in agreement, the ejection method can include a step of positioning a substrate having the two sections subject to ejection, a step of moving relatively the plurality of nozzles along a y-axis direction intersecting the x-axis direction perpendicularly to the substrate, and a step of ejecting a liquid material respectively from the two nozzles to the two sections subject to ejection if the two nozzles should respectively penetrate areas corresponding to the two sections.
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Fourson George
Pham Thanh Van
Seiko Epson Corporation
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