Eight transistor SRAM cell with improved stability requiring...

Details Eight transistor SRAM cell with improved stability requiring... Eight transistor SRAM cell with improved stability requiring...

2007-11-13

2007-11-13

Elms, Richard T. (Department: 2824)

Static information storage and retrieval

Systems using particular element

Flip-flop

C365S155000, C365S156000, C365S190000

Reexamination Certificate

active

11334647

ABSTRACT:
An SRAM cell that is accessed by a single word line and separate access transistors for read and write operations. A pair of write bit line transfer devices provide respectively access to the right and left sides of cross coupled pull-up, pull-down transistor pairs for a write operation, and a single read bit line transistor in series with the word line transistor, when selected, reads the content of the cell.

REFERENCES:
patent: 5384730 (1995-01-01), Vinal
patent: 5386379 (1995-01-01), Ali-Yahia et al.
patent: 6556487 (2003-04-01), Ratnakumar et al.
patent: 6563730 (2003-05-01), Poplevine et al.
patent: 6831853 (2004-12-01), Lin et al.
patent: 2007/0035986 (2007-02-01), Houston

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