Efficient transistor structure

Details Efficient transistor structure Efficient transistor structure

2007-01-16

2007-01-16

Prenty, Mark V. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S343000

Reexamination Certificate

active

11252010

ABSTRACT:
An integrated circuit comprises a first source, a first drain and a first gate that is arranged between the first source and the first drain. A first body is arranged in the first source. A second gate is arranged between the first source and a second drain. The first body includes a body contact tap. The first and second gates are arranged farther apart adjacent to said body contact tap than in areas that are not adjacent to said body contact tap An edge of the first body is substantially aligned with the first gate.

REFERENCES:
patent: 6281549 (2001-08-01), Davies
patent: 6740930 (2004-05-01), Mattei et al.
patent: 6867083 (2005-03-01), Imam et al.
patent: 2005/0110056 (2005-05-01), Sutardja
patent: 2006/0033171 (2006-02-01), Sutardja

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