Efficient transistor structure

Details Efficient transistor structure Efficient transistor structure

2006-08-15

2006-08-15

Prenty, Mark V. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S773000

Reexamination Certificate

active

07091565

ABSTRACT:
An integrated circuit includes a first source, a first drain, and a first gate that is arranged between the first source and the first drain. A first body is arranged inside of and is surrounded by the first source. The source and the drain include n+regions and the body includes a p+region. The first body tapers as a distance between a midportion of the first body and the first gate decreases. The first body is in contact with the first gate or spaced from the first gate.

REFERENCES:
patent: 6281549 (2001-08-01), Davies
patent: 6740930 (2004-05-01), Mattei et al.
patent: 6867083 (2005-03-01), Imam et al.
patent: 2005/0110056 (2005-05-01), Sutardja

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