Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-07-19
2005-07-19
Cao, Phat X. (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S362000
Reexamination Certificate
active
06919603
ABSTRACT:
An electrostatic discharge (ESD) protection structure for protecting against ESD events between signal terminals is disclosed. ESD protection is provided in a first polarity, by a bipolar transistor (4C) formed in an n-well (64; 164), having a collector contact (72; 172) to one signal terminal (PIN1) and its emitter region (68; 168) and base (66; 166) connected to a second signal terminal (PIN2). For reverse polarity ESD protection, a diode (25) is formed in the same n-well (64; 164) by a p+ region (78; 178) connected to the second signal terminal (PIN2), serving as the anode. The cathode can correspond to the n-well (64; 164) itself, as contacted by the collector contact (72; 172). By using the same n-well (64; 164) for both devices, the integrated circuit chip area required to implement this pin-to-pin protection is much reduced.
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Brodsky Jonathan
Pendharkar Sameer P.
Steinhoff Robert
Brady III W. James
Cao Phat X.
McLarty Peter K.
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
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