Efficient light emitting diodes and lasers

Details Efficient light emitting diodes and lasers Efficient light emitting diodes and lasers

2005-04-19

2005-04-19

Wille, Douglas A. (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

C257S103000

Reexamination Certificate

active

06881983

ABSTRACT:
An optoelectronic device such as an LED or laser which produces spontaneous emission by recombination of carriers (electrons and holes) trapped in Quantum Confinement Regions formed by transverse thickness variations in Quantum Well layers of group III nitrides.

REFERENCES:
patent: 4153905 (1979-05-01), Charmakadze et al.
patent: 4495514 (1985-01-01), Lawrence et al.
patent: 4670088 (1987-06-01), Tsaur et al.
patent: 4946548 (1990-08-01), Kotaki et al.
patent: 4966862 (1990-10-01), Edmond
patent: 5091333 (1992-02-01), Fan et al.
patent: 5210051 (1993-05-01), Carter, Jr.
patent: 5239188 (1993-08-01), Takeuchi et al.
patent: 5247533 (1993-09-01), Okazaki et al.
patent: 5252499 (1993-10-01), Rothschild
patent: 5272108 (1993-12-01), Kozawa
patent: 5278433 (1994-01-01), Manabe et al.
patent: 5281830 (1994-01-01), Kotaki et al.
patent: 5285078 (1994-02-01), Mimura et al.
patent: 5290393 (1994-03-01), Nakamura
patent: 5306662 (1994-04-01), Nakamura et al.
patent: 5323022 (1994-06-01), Glass et al.
patent: 5334277 (1994-08-01), Nakamura
patent: 5369289 (1994-11-01), Tamaki et al.
patent: 5385862 (1995-01-01), Mooustakas
patent: 5406123 (1995-04-01), Narayan
patent: 5408120 (1995-04-01), Manabe et al.
patent: 5433169 (1995-07-01), Nakamura
patent: 5442205 (1995-08-01), Brasen et al.
patent: 5468678 (1995-11-01), Nakamura et al.
patent: 5516731 (1996-05-01), Toutounchi et al.
patent: 5563422 (1996-10-01), Nakamura et al.
patent: 5578839 (1996-11-01), Nakamura et al.
patent: 5637530 (1997-06-01), Gaines et al.
patent: 5652434 (1997-07-01), Nakamura et al.
patent: 5686738 (1997-11-01), Moustakas
patent: 5733796 (1998-03-01), Manabe et al.
patent: 5734182 (1998-03-01), Nakamura et al.
patent: 5747832 (1998-05-01), Nakamura et al.
patent: 5751752 (1998-05-01), Shakuda
patent: 5767581 (1998-06-01), Nakamura et al.
patent: 5777350 (1998-07-01), Nakamura et al.
patent: 5828684 (1998-10-01), Van de Walle
patent: 5834326 (1998-11-01), Miyachi et al.
patent: 5850410 (1998-12-01), Kuramata
patent: 5877558 (1999-03-01), Nakamura et al.
patent: 5880486 (1999-03-01), Nakamura et al.
patent: 5905276 (1999-05-01), Manabe et al.
patent: 5959307 (1999-09-01), Nakamura et al.
patent: 5998925 (1999-12-01), Shimizu et al.
patent: 6001669 (1999-12-01), Gaines et al.
patent: 6017774 (2000-01-01), Yuasa et al.
patent: 6051849 (2000-04-01), Davis et al.
patent: 6066861 (2000-05-01), Höhn et al.
patent: 6069440 (2000-05-01), Shimizu et al.
patent: 6078063 (2000-06-01), Nakamura et al.
patent: 6084899 (2000-07-01), Shakuda
patent: 6093965 (2000-07-01), Nakamura et al.
patent: 6115399 (2000-09-01), Shakuda
patent: 6153010 (2000-11-01), Kiyoku et al.
patent: 6172382 (2001-01-01), Nagahama et al.
patent: 6204512 (2001-03-01), Nakamura et al.
patent: 6215133 (2001-04-01), Nakamura et al.
patent: 6222871 (2001-04-01), Chang-Hasnain et al.
patent: 6238943 (2001-05-01), Kobayashi et al.
patent: 6245259 (2001-06-01), Höhn et al.
patent: 6249012 (2001-06-01), Manabe et al.
patent: 6337493 (2002-01-01), Tanizawa et al.
patent: 6362017 (2002-03-01), Manabe et al.
patent: 6495862 (2002-12-01), Okazaki et al.
patent: 6555457 (2003-04-01), Derkits, Jr. et al.
patent: 20010022367 (2001-09-01), Nakamura et al.
patent: 20010030318 (2001-10-01), Nakamura et al.
patent: 20010032976 (2001-10-01), Ishikawa et al.
patent: 20020046693 (2002-04-01), Kiyoku et al.
patent: 20020060326 (2002-05-01), Manabe et al.
patent: 20020182765 (2002-05-01), Tran et al.
patent: 33 45 172 (1985-07-01), None
patent: 0 356 059 (1990-02-01), None
patent: 0483688 (1991-10-01), None
patent: 0483688 (1991-10-01), None
patent: 0 513 745 (1992-11-01), None
patent: 54-093380 (1979-07-01), None
patent: 59-228776 (1984-12-01), None
patent: 61-056474 (1986-03-01), None
patent: 02-229475 (1990-09-01), None
patent: 2229475 (1990-09-01), None
patent: 03-203388 (1991-09-01), None
patent: 03-218625 (1991-09-01), None
patent: 03-252177 (1991-11-01), None
patent: 04-068579 (1992-03-01), None
patent: 4209577 (1992-07-01), None
patent: 4236478 (1992-08-01), None
patent: 04-242985 (1992-08-01), None
patent: 05-243614 (1993-09-01), None
patent: 06-021511 (1994-01-01), None
patent: 06-177423 (1994-06-01), None
patent: 06-268259 (1994-09-01), None
patent: 8167735 (1996-06-01), None
patent: 8213692 (1996-08-01), None
patent: 8306643 (1996-11-01), None
patent: 8306958 (1996-11-01), None
patent: 8316527 (1996-11-01), None
patent: 52-028887 (1997-03-01), None
patent: 9092880 (1997-04-01), None
patent: 9134881 (1997-05-01), None
patent: 9167857 (1997-06-01), None
patent: 11145513 (1999-05-01), None
patent: WO 8800392 (1988-01-01), None
Dovidenko, K., et al., “Aluminum nitride films on different orientations of sapphire and silicon,”J. Appl. Phys.79(5) : 2439-2445, (1996).
Jain, S.C., et al., “Applied Physics Reviews/III—nitrides: Growth, characterization, and properties,”J. Appl. Phys. 87(3) : 965-1006, (2000).
Lin, Y.S., et al., “Dependence of composition fluctuation on indium content in InGaN/GaN multiple quantum wells,”Appl. Phys. Lett., 77(19) : 2988-2990, (2000).
Narukawa, Y., et al., “Dimensionality of excitons in laser-diode structures composed of InxGa1-xN multiple quantum wells,”Phys. Rev. B, 59(15) : 10283-10288, (1999).
Kawakami, Y., et al., “Dynamics of optical gain in InxGa1-xN multi-quantum-well-based laser diodes,”Appl. Phys. Lett., 77(14) : 2151-2153, (2000).
Strite, S., and Morkoc, H., et al., “GaN, A1N, and InN: A review,”J. Vac. Sci. Technol. B, 10(4) :1237-1266, (1992).
Hassan, K.M., et al., “Optical and structural studies of Ge nanocrystals embedded in AIN matrix fabricated by pulsed laser deposition,”Appl. Phys. Lett., 75(9) : 1222-1224, (1999).
Teng, C.W., et al., “Quantum confinement of E1and E2transitions in Ge quantum dots embedded in an Al2O3or an AlN matrix,”App. Phys. Lett., 76(1) : 43-45, (2000).
Narukawa, Y., et al., “Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode emitting at 420 nm,”Appl. Phys. Lett., 70(8) : 981-983, (1997).
Nakamura, S., “The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes,”Science, 1-14, (retrieved online Aug. 08, 2000). Retrieved from the Internet <URL: http://www.science.org/cgi/content/full/281/5379/956>.
Chichibu, S., et al., “Spatially resolved cathodoluminescence spectra of InGaN quantum wells,”App. Phys. Lett., 71(16) : 2346-2348, (1997).
Foresi, J.S., “Metel contacts to gallium nitride,”Appl. Phys. Lett., 62(22):2859-2861 (1993).
Nakamura, S., “InGaN blue-light-emitting diodes,”J. of Inst. Electronics, Information and Communication Engineers, 76(9):913-917 (1993). (Abstract).
Akasaki, I., et al., “High efficiency UV and blue emitting devices prepared by MOVPE and low energy electron beam irradiation treatment,”SPIE—The International Society for Optical Engineering, 1361:138-149 (1990).
Amano, H., et al., “P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI),”Japanese Journal of Applied Physics, 28(12):L2112-L2114 (1989).
Andreev, V.M., et al., “Luminescence Properties of i-n, i-n-i and n-i-n Structures Made of Epitaxial Layers GaN/α-Al2O3,”Journal of Luminescence, 35:9-16 (1986).
Boulou, M., et al., “Recombination Mechanisms in GaN:Zn*,”Journal of Luminescence, 18/19:767-770 (1979).
Casey, H.C., Jr., et al., “Optical Fields and Wave Propagation,” InHeterostructure Lasers, (Academic Press), pp. 32-35 (1978).
Goldenberg, B., et al. “Ultraviolet and violet light-emitting GaN diodes grown by low-pressure metalorganic chemical vapor deposition,”Appl. Phys. Lett., 62(4):381-383 (1993).
Goodenough, F., “Exotic Semiconductors Showcased at the IEDM,”Electronic Design, 60-68 (1994).
Hayashi, I, et al., “Junction Lasers Which Operate Continuously at Room Temperature,”Appl. Phys. L

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