Efficient in-situ resist strip process for heavy polymer metal e

Details Efficient in-situ resist strip process for heavy polymer metal e Efficient in-situ resist strip process for heavy polymer metal e

1999-05-21

2000-10-10

Powell, William

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

134 12, 156345, 216 67, 438706, 438710, H01L 2100

Patent

active

061301698

ABSTRACT:
The inventive method allows for a more complete stripping of photoresist and sidewall polymer in the production of semiconductor devices using a four step process in a plasma stripper. The first step uses CF.sub.4, O.sub.2, and H.sub.2 O as etchant gases in a downstream quartz (DSQ) chamber at a low pressure, which are ionized by radio waves for a period of between 5 and 20 seconds. The second step discontinues the radio waves, while continuing the flow of etchant gases and heating the semiconductor. The third step only provides H.sub.2 O vapor to the DSQ chamber. The fourth step provides both O.sub.2 and H.sub.2 O as etchant gases ionized by radio waves to remove the remaining resist.

REFERENCES:
patent: 4736087 (1988-04-01), Whitlock et al.
patent: 5578163 (1996-11-01), Yachi
patent: 5851302 (1998-12-01), Solis
patent: 5925577 (1999-07-01), Solis

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