Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-02-22
2005-02-22
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S361000, C257S355000, C257S358000, C257S359000, C257S357000, C257S362000
Reexamination Certificate
active
06858902
ABSTRACT:
A semiconductor device for ESD protection of an input/output pad (301) of an integrated circuit built in a substrate of a first conductivity type comprising a multi-finger MOS transistor (304), its source (304b) and its gate (304c) connected to ground potential and its drain (304a) connected to the I/O pad. A well of the opposite conductivity type, partially separated from the substrate by shallow trench isolations, has a diode (302), its anode (302b) connected to the pad and also to the transistor drain, and its cathode (302a) connected to power303). These transistor and diode connections create a parasitic silicon controlled rectifier (SCR) with the SCR-anode (310a) formed by the diode anode, the first base region formed by the well, the second base region formed by the substrate, and the SCR-cathode (311a) formed by the transistor source. The SCR structure provides a significantly lower clamping voltage and an about two times higher failure current than a substrate-pumped MOS transistor.
REFERENCES:
patent: 20040100745 (2004-05-01), Chen et al.
Duvvury Charvaka
Salling Craig T.
Brady III W. James
Erdem Fazli
Flynn Nathan J.
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
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