Static information storage and retrieval – Read/write circuit – Bad bit
Reexamination Certificate
2005-03-01
2005-03-01
Nguyen, Tan T. (Department: 2818)
Static information storage and retrieval
Read/write circuit
Bad bit
C365S189020, C365S230020
Reexamination Certificate
active
06862230
ABSTRACT:
The present invention relates to a system and method adapted to increase memory cell and memory architecture design yield. The present invention includes memory architecture having a decoder and a multi-bank memory. The decoder is adapted to decode addresses. The multi-bank memory interacts with the decoder, wherein the multi-bank memory includes at least one output data bit adapted to complete a word for a failing bank in the multi-bank memory.
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Terzioglu Esin
Winograd Gil I.
Broadcom Corporation
McAndrews Held & Malloy Ltd.
Nguyen Tan T.
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