Effective photoresist stripping process for high dosage and...

Details Effective photoresist stripping process for high dosage and... Effective photoresist stripping process for high dosage and...

2006-12-05

2006-12-05

Le, Hoa Van (Department: 1752)

Radiation imagery chemistry: process, composition, or product th

Stripping process or element

Forming nonplanar image

C430S329000, C430S331000

Reexamination Certificate

active

07144673

ABSTRACT:
The present subject matter relates to a method of stripping a photoresist after the photoresist film has been subjected to a high dose and high energy ion implant process. The method involves soaking the photoresist film in DI water, dry etching with oxygen plasma, and immersing in Caro's acid solution to improve the throughput of removing the film from the underlying substrate. The method can also be used to strip photoresist that has been hardened or altered by other types of processes such as dry etch transfer steps and chemical treatments. In some applications, the dry etching step may be omitted from the stripping process or the dry etching step may be combined with the water soak in an integrated process.

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patent: 5882489 (1999-03-01), Bersin et al.
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