Effecting selectivity of silicon or silicon-germanium...

Details Effecting selectivity of silicon or silicon-germanium... Effecting selectivity of silicon or silicon-germanium...

2007-07-31

2011-12-20

Ahmadi, Mohsen (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having schottky gate

C438S256000, C438S376000, C438S514000, C438S630000, C438S752000, C257SE21315, C257SE21334, C257SE21347, C257SE21461, C257SE21593

Reexamination Certificate

active

08080452

ABSTRACT:
The invention relates to a method for selective deposition of Si or SiGe on a Si or SiGe surface. The method exploits differences in physico-chemical surface behavior according to a difference in doping of first and second surface regions. By providing at least one first surface region with a Boron doping of a suitable concentration range and exposing the substrate surface to a cleaning and passivating ambient atmosphere in a prebake step at a temperature lower or equal than 800° C., a subsequent deposition step of Si or SiGe will not lead to a layer deposition in the first surface region. This effect is used for selective deposition of Si or SiGe in the second surface region, which is not doped with Boron in the suitable concentration range, or doped with another dopant, or not doped. The method thus saves a usual photolithography sequence required for selective deposition of Si or SiGe in the second surface region according to the prior art.

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