EEPROM with etched tunneling window

Details EEPROM with etched tunneling window EEPROM with etched tunneling window

2007-12-11

2007-12-11

Wilczewski, Mary (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S315000, C257S330000

Reexamination Certificate

active

10794887

ABSTRACT:
A method forming a current path in a substrate (322) having a first conductivity type is disclosed. The method includes forming an impurity region (314) having a second conductivity type and extending from a face of the substrate to a first depth. A hole (305) is formed in the impurity region. A first dielectric layer (360-364) is formed on an inner surface of the hole. A first electrode (306) is formed in the hole adjacent the dielectric layer.

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patent: 2002/0177269 (2002-11-01), Chou
patent: 2004/0056300 (2004-03-01), Choi et al.

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