EEPROM With bulk zero program capability

Details EEPROM With bulk zero program capability EEPROM With bulk zero program capability

1981-09-28

1983-10-25

Fears, Terrell W.

Static information storage and retrieval

Systems using particular element

Semiconductive

365218, G11C 1140

Patent

active

044123094

ABSTRACT:
An EEPROM which can erase an array of memory cells to all "1"s is capable of causing all of the cells of the array to assume all "0"s, also. The array of memory cells is arranged with one of said memory elements at the intersection of each of a plurality of rows and columns. The memory elements are characterized as assuming relatively high threshold voltage states in response to an erase voltage and relatively low threshold voltage states in response to a program voltage. All columns and rows are selected in order to apply the program voltage to all of the memory elements.

REFERENCES:
patent: 4099069 (1978-07-01), Cricchi et al.
patent: 4242737 (1980-12-01), Bate
patent: 4322823 (1982-03-01), Pricer et al.

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