EEPROM structure with improved data retention utilizing...

Details EEPROM structure with improved data retention utilizing... EEPROM structure with improved data retention utilizing...

2005-07-21

2008-09-16

Landau, Matthew C (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S316000, C257SE29300

Reexamination Certificate

active

07425741

ABSTRACT:
A biased conductive plate is provided over an NVM cell structure to overcome data retention charge loss due to the presence of dielectric films that are conductive at higher temperatures. The biased conductive plate is preferably formed from the lowest metal layer in the fabrication process flow, but any biased conductive layer can be used.

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patent: 5614748 (1997-03-01), Nakajima et al.
patent: 6137723 (2000-10-01), Bergemont et al.
patent: 6597036 (2003-07-01), Lee et al.
patent: 2003/0043630 (2003-03-01), Forbes et al.

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