Static information storage and retrieval – Read/write circuit – Including reference or bias voltage generator
Patent
1988-01-20
1989-05-16
Fears, Terrell W.
Static information storage and retrieval
Read/write circuit
Including reference or bias voltage generator
365203, 36523001, 357 45, G11C 1140
Patent
active
048315893
ABSTRACT:
An EEPROM or EPPROM programming switch operable at low circuit voltage (V.sub.CC) includes a first pair of native field effect transistors interconnected between a word line and a programming voltage potential and a second pair of serially connected native transistor devices connected between a charge pump node and the programming voltage. The gate electrodes of the first pair of transistors are connected to the charge pump node and the gate electrodes of the second pair of transistors are connected to the word line. Decoding means is provided for preventing charge accumulation of the word line when the word line is not selected and for permitting charge accumulation of the word line when the word line is selected for programming. The common terminals of the first and second transistors and the third and fourth transistors are connected to a bias circuit for preventing conduction of the transistors when the word line has not been selected for programming.
REFERENCES:
patent: 4751678 (1988-01-01), Raghunathan
Fears Terrell W.
ICT International CMOS Technology, Inc.
LandOfFree
EEPROM programming switch operable at low VCC does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with EEPROM programming switch operable at low VCC, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and EEPROM programming switch operable at low VCC will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2329053