EEPROM memory having extended life

Static information storage and retrieval – Floating gate – Particular biasing

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365222, G11C 1134

Patent

active

047180412

ABSTRACT:
Disclosed is a method and apparatus for extending the programmable life of an EEPROM memory. For each write commamd generated external to the memory an automatic internal read operation is executed. Each internally generated read operation is accompanied by an increased sense voltage. Data written into selected cells is temporarily stored and compared with the data read. If a match of the compared data is found, the memory operations continue as usual. If a mismatch is found, an internally generated write operation is generated, the programming voltage is increased, and the data temporarily stored is rewritten at the increased voltage. Data polling features are provided with both the internal and externally generated write operations.

REFERENCES:
patent: 4458348 (1984-07-01), Fukuda et al.

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