Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2006-05-17
2008-08-19
Zarabian, A. (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185290
Reexamination Certificate
active
07414893
ABSTRACT:
An electrically erasable and programmable memory in which control gate transistors have been suppressed includes memory cells each with an access transistor and a floating gate transistor. A word line decoder is connected to word lines of the memory cells by a selection line connected to the gate terminals of the access transistors of the word line, and by a control gate line connected to the control gates of the floating gate transistors of the word line. Thus the voltage applicable to the gate terminals of the floating gate transistors is no longer limited by the voltage susceptible of being obtained on the source terminal of the control gate transistors.
REFERENCES:
patent: 4375087 (1983-02-01), Wanlass
patent: 4503524 (1985-03-01), McElroy
patent: 5267196 (1993-11-01), Talreja et al.
patent: 5270980 (1993-12-01), Pathak et al.
patent: 5592415 (1997-01-01), Kato et al.
patent: 5668757 (1997-09-01), Jeng
patent: 5677871 (1997-10-01), Pio et al.
patent: 5862082 (1999-01-01), Dejenfelt et al.
patent: 5963478 (1999-10-01), Sedlak
patent: 6380636 (2002-04-01), Tatsukawa et al.
patent: 6757196 (2004-06-01), Tsao et al.
patent: 2002/0054501 (2002-05-01), Honigschmid et al.
patent: 2003/0048661 (2003-03-01), Sakui et al.
patent: 2005/0127428 (2005-06-01), Mokhlesi et al.
Hidalgo Fernando N
Iannucci Robert
Jorgenson Lisa K.
Seed IP Law Group PLLC
STMicroelectronics S.A.
LandOfFree
EEPROM memory architecture does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with EEPROM memory architecture, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and EEPROM memory architecture will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3994086