EEPROM memory architecture

Static information storage and retrieval – Floating gate – Particular biasing

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C365S185290

Reexamination Certificate

active

07414893

ABSTRACT:
An electrically erasable and programmable memory in which control gate transistors have been suppressed includes memory cells each with an access transistor and a floating gate transistor. A word line decoder is connected to word lines of the memory cells by a selection line connected to the gate terminals of the access transistors of the word line, and by a control gate line connected to the control gates of the floating gate transistors of the word line. Thus the voltage applicable to the gate terminals of the floating gate transistors is no longer limited by the voltage susceptible of being obtained on the source terminal of the control gate transistors.

REFERENCES:
patent: 4375087 (1983-02-01), Wanlass
patent: 4503524 (1985-03-01), McElroy
patent: 5267196 (1993-11-01), Talreja et al.
patent: 5270980 (1993-12-01), Pathak et al.
patent: 5592415 (1997-01-01), Kato et al.
patent: 5668757 (1997-09-01), Jeng
patent: 5677871 (1997-10-01), Pio et al.
patent: 5862082 (1999-01-01), Dejenfelt et al.
patent: 5963478 (1999-10-01), Sedlak
patent: 6380636 (2002-04-01), Tatsukawa et al.
patent: 6757196 (2004-06-01), Tsao et al.
patent: 2002/0054501 (2002-05-01), Honigschmid et al.
patent: 2003/0048661 (2003-03-01), Sakui et al.
patent: 2005/0127428 (2005-06-01), Mokhlesi et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

EEPROM memory architecture does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with EEPROM memory architecture, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and EEPROM memory architecture will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3994086

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.