EEPROM margin testing design

Details EEPROM margin testing design EEPROM margin testing design

1984-07-27

1986-09-16

Fears, Terrell W.

Static information storage and retrieval

Read/write circuit

Testing

371 21, G11C 1140

Patent

active

046126309

ABSTRACT:
A circuitry and method of testing programmable, variable threshold memory cells by applying a variable voltage above a normal read voltage to the control gate of a high threshold cell to determine the actual high threshold value and applying zero voltage to the control gate of a low threshold cell to determine if the low threshold is of the opposite polarity of the high threshold.

REFERENCES:
patent: 3846768 (1974-11-01), Krick
patent: 4127901 (1978-11-01), Horne et al.
patent: 4243937 (1981-01-01), Multani et al.
patent: 4267583 (1981-05-01), Suzuki
patent: 4301535 (1981-11-01), McKenny et al.
patent: 4393475 (1983-07-01), Kitagawa
patent: 4543647 (1985-09-01), Yoshida

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