EEPROM flash memory cell, memory device, and process for formati

Details EEPROM flash memory cell, memory device, and process for formati EEPROM flash memory cell, memory device, and process for formati

1997-07-28

1998-09-29

Chaudhuri, Olik

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257315, 257316, H01L 29788

Patent

active

058148574

ABSTRACT:
An EEPROM flash memory cell and a process for formation thereof are disclosed. The EEPROM flash memory cell includes: a source; a drain; a gate insulating layer disposed upon a channel between the source and the drain; a floating gate electrode disposed upon the gate insulating layer and facing toward the channel; and a control gate electrode disposed upon the floating gate electrode across an intermediate insulating layer; and further includes, an erasing electrode for contacting with at least one side of the floating gate electrode at least at one or more spots thereof across a tunneling insulating layer.

REFERENCES:
patent: 4302766 (1981-11-01), Guterman et al.
patent: 4996571 (1991-02-01), Kume et al.
patent: 5108939 (1992-04-01), Manley et al.
patent: 5168465 (1992-12-01), Harari
patent: 5364805 (1994-11-01), Taura et al.
patent: 5380672 (1995-01-01), Yuan et al.
patent: 5418741 (1995-05-01), Gill
patent: 5482879 (1996-01-01), Hong
patent: 5587332 (1996-12-01), Chang et al.

Affiliated with

Also associated with

Rating

EEPROM flash memory cell, memory device, and process for formati does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with EEPROM flash memory cell, memory device, and process for formati, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and EEPROM flash memory cell, memory device, and process for formati will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-688054